Transistor ApplicationsNitek’s first generation Micro-pixel design deep UV LEDs offer superior performance as compared to the conventional deep UV LEDs.  These power and lifetime advantages result from the excellent light extraction and thermal management offered by this patented and unique device design. We offer a wide variety of micro-pixel LEDs and lamps in the wavelength range of 250-365 nm.  Please refer to our published RESEARCH for more technical details.

 

Transistor Applications

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UV LED AppsNitek’s second generation deep-UV LEDs currently under development employ a unique and patented vertical conduction design.  It is ideal for producing large-area UV and deep-UV LEDs & lamps. Vertically conducting LEDs offer high output powers because of their capability of handling much higher drive currents which is a result of lower differential resistance, better thermal management and superior heat sinking capability. Nitek vertically conducting deep-UV LEDs will have output powers about 1–2 orders of magnitude higher than the conventional LEDs. At present Nitek is the only company that can offer vertical conduction deep-UV LEDs.

 

 

 


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III-N Elec Devices

 

III-Nitride Heterostructure Field-Effect Transistors (HFETs) are rapidly emerging as the most promising solid state high-power rf sources with power densities as high as 10–30 W/mm.  One of the most critical issues limiting the performance of these devices at high RF power levels is the device degradation primarily caused by high gate-leakage currents. Insulated gate HFETs (IGHFETs) with SiO2 and Si3N4 gate dielectrics can potentially overcome this problem by reducing both the reverse and the forward gate-leakage currents by several orders of magnitude. Nitek and University of South Carolina research teams have demonstrated kilo-volt operation of Insulating gate III-N HFETs.  These devices form the basis of high-voltage, high-power electronics with performance much superior to that of silicon based devices.  These III-Nitride power electronic devices will find numerous applications in electric vehicles, computer power supplies and electric power control. Their higher efficiencies can lead to significant energy savings impacting the global warming.


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Transistor ApplicationsNitek fabricates high quality AlInGaN epitaxial wafers for III-nitride devices in a fully equipped clean room facility. The company utilizes its proprietary and patented metal organic hydride vapor phase epitaxy (MOHVPE) technology for this purpose. This method can grow very thick and low-defect AlN and AlInGaN layers. Nitek can supply substrates/templates and epitaxial wafers for custom device needs.

 
Transistor Applications

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