Nitek Inc. has been awarded several Small Business Innovative Research (SBIR) and Strategic Technology Transfer (STTR) projects to develop new and innovative products. These products will be based on the research and development the company is undertaking and will serve as the next generation addition to Niteks current product portfolio.

National Science Foundation (NSF) SBIR February 15th , 2009.
Nitek Inc. was awarded a $500,000.00 SBIR Phase II project by National Science Foundation (NSF) to develop high power deep UV LEDs.

US Army SBIR December 4th, 2008.
Nitek Inc. was awarded a SBIR Phase I project to develop deep UV lamps

Air force (AFOSR) STTR, November 15th, 2008.
Nitek Inc. was awarded a STTR Phase I project to develop high voltage HEMTs on novel substrates.

South Carolina Research Authority (SCRA) SBIR Match , June 4th, 2008.
Nitek Inc. was awarded SBIR Phase I Matching Grant Program to develop high power deep UV LEDs.

National Science Foundation (NSF) SBIR January 1st, 2008.
Nitek Inc. was awarded a SBIR Phase I project to develop novel substrates for next generation devices.

National Science Foundation (NSF) SBIR January 1st, 2008.
Nitek Inc. was awarded a SBIR Phase I project to develop next generation high power deep UV LEDs.

International Workshop in Nitride Semiconductors (IWN), Montreux, Switzerland, October 2008 .
An invited presentation was made by Nitek, Inc. on the topic of “Stable High Power deep UV LEDs” in this prestigious conference. The presentation covered a variety of sub-topics such as present status, deep UV LAMPS and others.

“Present Status of Deep UV Nitride Light Emitters” Materials Science Forum Vol. 590 (August 19, 2008) pp 141-174, online at http://www.scientific.net © (2008) Trans Tech Publications, Switzerland
This chapter provides a review of III-nitride based UV light emitting devices including technical developments that allow for emission in the ultraviolet spectrum, and an overview of their applications in optoelectronic systems.

“Vertical conduction strategy cranks up UV LED output power” compound semiconductor.net-April 2008.
Vertical conduction ramps up the drive currents and output powers of ultraviolet LEDs. Such devices will soon enter the market through Nitek, Inc., where they will take on bulky high-voltage UV lamps for use in purification and curing applications.

“Ultraviolet light-emitting diodes based on group three nitrides” Nature Photonics - Feb 2008.
Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater aluminum content are required. The material properties of these materials lie on the border between conventional semiconductors and insulators, which adds a degree of complexity to the development of efficient light-emitting devices.

International Symposium on Semiconductor Light Emitting Devices-2008 (ISSLED) Phoenix, Arizona, USA May 2008.
An invited conference talk was presented based on the collaborative research work of Nitek, Inc. and Photonics and Microelectronics Laboratory (PML) at the University of South Carolina (USC). This work and presentation primarily focused on “Extremely high V/III ratio MOCVD growth of Al_xGa_yIn1_-x-yN MQW structures on non-Polar GaN substrates/templates”.

International Conference on Nitride Semiconductors (ICNS) Las Vegas, Nevada, USA September 2007.
Important research results of Nitek, Inc. and Photonics and Microelectronics Laboratory (PML) at the University of South Carolina (USC) collaboration on III-Nitride UV optoelectronic devices on polar and non-polar substrates, and novel growth instrumentation were presented as the plenary lecture.